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? semiconductor components industries, llc, 2013 october, 2017 ? rev. 5 1 publication order number: ncv8535/d ncv8535 ultra high accuracy, low iq, 500 ma low dropout regulator with enable the ncv8535 is a high performance, low dropout regulator. with accuracy of 0.9% over line and load and ultra?low quiescent current and noise it encompasses all of the necessary features required by today?s consumer electronics. this unique device is guaranteed to be stable without a minimum load current requirement and stable with any type of capacitor as small as 1.0 f. the ncv8535 also comes equipped with sense and noise reduction pins to increase the overall utility of the device. the ncv8535 offers reverse bias protection. features ? high accuracy over line and load ( 0.9% at 25 c) ? ultra?low dropout voltage at full load (260 mv typ.) ? no minimum output current required for stability ? low noise (31 vrms w/10 nf c nr and 51 vrms w/out c nr ) ? low shutdown current (0.07 a) ? reverse bias protected ? 2.9 v to 12 v supply range ? thermal shutdown protection ? current limitation ? requires only 1.0 f output capacitance for stability ? stable with any type of capacitor (including mlcc) ? available in 1.5 v, 1.8 v, 1.9 v, 2.5 v, 2.8 v, 2.85 v, 3.0 v, 3.3 v, 3.5 v, 5.0 v and adjustable output voltages ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these are pb?free devices applications ? pcmcia card ? cellular phones ? camcoders and cameras ? networking systems, dsl/cable modems ? cable set?top box ? mp3/cd players ? dsp supply ? displays and monitors this document contains information on some products that are still under development. on semiconductor reserves the right to change or discontinue these products without notice. see detailed ordering, marking and shipping information in the package dimensions section on page 21 of this data sheet. ordering information marking diagram www. onsemi.com v8535 = specific device code xxx = adj, 150, 180, 190, 250, 280, 285, 300, 330, 350, 500 a = assembly location l = wafer lot y = year w = work week = pb?free package dfn10 mn suffix case 485c v8535 xxx alyw 1 fixed version pin 1, 2. v out 3. sense 4. gnd 5, 6. nc 7. nr 8. sd 9, 10. v in adj version pin 1, 2. v out 3. adj 4. gnd 5, 6. nc 7. nr 8. sd 9, 10. v in (note: microdot may be in either location) pin configuration
ncv8535 www. onsemi.com 2 figure 1. typical fixed version application schematic v in v out on off c in 1.0 f c out 1.0 f out sense out in in nr 3 2 1 9 10 84 + + 7 gnd sd c nr 10 nf (optional) figure 2. typical adjustable version application schematic v in v out on off c in 1.0 f c out 1.0 f out adj in in nr 3 2 1 9 10 84 + + 7 gnd sd c nr 10 nf (optional) out r2 r1 c adj 68 pf
ncv8535 www. onsemi.com 3 figure 3. block diagram, fixed output version figure 4. block diagram, adjustable output version
ncv8535 www. onsemi.com 4 pin function description pin no. pin name description fixed version 1, 2 v out regulated output voltage. bypass to ground with c out 1.0 f. 3 sense for output voltage sensing, connect to pins 1 and 2. 4 gnd power supply ground 7 nr noise reduction pin. this is an optional pin used to further reduce noise. 8 sd shutdown pin. when not in use, this pin should be connected to the input pin. 9, 10 v in power supply input voltage 5, 6 nc not connected epad epad exposed thermal pad should be connected to ground. adjustable version 1, 2 v out regulated output voltage. bypass to ground with c out 1.0 f. 3 adj adjustable pin; reference voltage = 1.25 v. 4 gnd power supply ground 7 nr noise reduction pin. this is an optional pin used to further reduce noise. 8 sd shutdown pin. when not in use, this pin should be connected to the input pin. 9, 10 v in power supply input voltage 5, 6 nc not connected epad epad exposed thermal pad should be connected to ground. maximum ratings rating symbol value unit input voltage v in ?0.3 to +16 v output voltage v out ?0.3 to v in +0.3 or 10 v* v shutdown pin voltage v sh ?0.3 to +16 v junction temperature range t j ?40 to +150 c storage temperature range t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. note: this device series contains esd protection and exceeds the following tests: human body model (hbm) tested per aec?q100?002 (eia/jesd22?a114) machine model (mm) tested per aec?q100?003 (eia/jesd22?a115) charged device model (cdm) tested per eia/jesd22?c101 *which ever is less. reverse bias protection feature valid only if v out ? v in 7 v. thermal characteristics characteristic test conditions (typical value) unit min pad board (note 1) 1 pad board (note 1) junction?to?air, ja 215 66 c/w junction?to?pin, jl2 55 17 c/w 1. as mounted on a 35 x 35 x 1.5 mm fr4 substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. jedec 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. t est cond itions are under natural convection or zero air flow.
ncv8535 www. onsemi.com 5 electrical characteristics ? 5.0 v (v out = 5.0 v typical, v in = 5.4 v, t a = ?40 c to +85 c, unless otherwise noted, note 2.) characteristic symbol min typ max unit output voltage (accuracy) v in = 5.4 v to 9.0 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 4.955 5.0 +0.9% 5.045 v output voltage (accuracy) v in = 5.4 v to 9.0 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 4.930 5.0 +1.4% 5.070 v output voltage (accuracy) v in = 5.4 v to 9.0 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 4.925 5.0 +1.5% 5.075 v line regulation v in = 5.4 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 5.4 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (see figure 16) ipk 500 700 830 ma short output current (see figure 16) i sc 930 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 3) i load = 300 ma (note 3) i load = 50 ma i load = 0.1 ma in dropout v in = 4.9 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 93 58 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 5.0 v) i outr 10 a 2. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. t a must be greater than 0 c.
ncv8535 www. onsemi.com 6 electrical characteristics ? 3.5 v (v out = 3.5 v typical, v in = 3.9 v, t a = ?40 c to +85 c, unless otherwise noted, note 4.) characteristic symbol min typ max unit output voltage (accuracy) v in = 3.9 v to 7.5 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 3.469 3.5 +0.9% 3.532 v output voltage (accuracy) v in = 3.9 v to 7.5 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 3.451 3.5 +1.4% 3.549 v output voltage (accuracy) v in = 3.9 v to 7.5 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 3.448 3.5 +1.5% 3.553 v line regulation v in = 3.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 3.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (see figure 16) ipk 500 700 800 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 5) i load = 300 ma i load = 50 ma i load = 0.1 ma in dropout v in = 3.4 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 68 47 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 3.5 v) i outr 10 a 4. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. t a must be greater than 0 c.
ncv8535 www. onsemi.com 7 electrical characteristics ? 3.3 v (v out = 3.3 v typical, v in = 3.7 v, t a = ?40 c to +85 c, unless otherwise noted, note 6.) characteristic symbol min typ max unit output voltage (accuracy) v in = 3.7 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 3.270 3.3 +0.9% 3.330 v output voltage (accuracy) v in = 3.7 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 3.254 3.3 +1.4% 3.346 v output voltage (accuracy) v in = 3.7 v to 7.3 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 3.250 3.3 +1.5% 3.350 v line regulation v in = 3.7 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 3.7 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (see figure 16) ipk 500 700 800 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 7) i load = 300 ma i load = 50 ma i load = 0.1 ma in dropout v in = 3.2 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 69 46 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 3.3 v) i outr 10 a 6. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. t a must be greater than 0 c.
ncv8535 www. onsemi.com 8 electrical characteristics ? 3.0 v (v out = 3.0 v typical, v in = 3.4 v, t a = ?40 c to +85 c, unless otherwise noted, note 8.) characteristic symbol min typ max unit output voltage (accuracy) v in = 3.4 v to 7.0 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 2.973 3.0 +0.9% 3.027 v output voltage (accuracy) v in = 3.4 v to 7.0 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 2.958 3.0 +1.4% 3.042 v output voltage (accuracy) v in = 3.4 v to 7.0 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 2.955 3.0 +1.5% 3.045 v line regulation v in = 3.4 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 3.4 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (see figure 16) ipk 500 700 800 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 9) i load = 300 ma i load = 50 ma i load = 0.1 ma in dropout v in = 2.9 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 56 37 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 3.0 v) i outr 10 a 8. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. t a must be greater than 0 c.
ncv8535 www. onsemi.com 9 electrical characteristics ? 2.85 v (v out = 2.85 v typical, v in = 3.25 v, t a = ?40 c to +85 c, unless otherwise noted, note 10) characteristic symbol min typ max unit output voltage (accuracy) v in = 3.25 v to 6.85 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 2.824 2.85 +0.9% 2.876 v output voltage (accuracy) v in = 3.25 v to 6.85 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 2.810 2.85 +1.4% 2.890 v output voltage (accuracy) (note 11) v in = 3.25 v to 6.85 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 2.807 2.85 +1.5% 2.893 v line regulation v in = 3.25 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 3.25 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1ma v do 340 230 110 10 mv peak output current (see figure 16) i pk 500 700 800 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 12) i load = 300 ma i load = 50 ma i load = 0.1 ma in dropout v in = 2.75 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 61 40 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 2.85 v) i outr 10 a 10. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. for output current capability for t a < 0 c, please refer to figure 18. 12. t a must be greater than 0 c.
ncv8535 www. onsemi.com 10 electrical characteristics ? 2.8 v (v out = 2.8 v typical, v in = 3.2 v, t a = ?40 c to +85 c, unless otherwise noted, note 13.) characteristic symbol min typ max unit output voltage (accuracy) v in = 3.2 v to 6.8 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 2.774 2.8 +0.9% 2.826 v output voltage (accuracy) v in = 3.2 v to 6.8 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 2.760 2.8 +1.4% 2.840 v output voltage (accuracy) (note 14) v in = 3.2 v to 6.8 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 2.758 2.8 +1.5% 2.842 v line regulation v in = 3.2 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 3.2 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma i load = 300 ma i load = 50 ma i load = 0.1ma v do 340 230 110 10 mv peak output current (see figure 16) i pk 500 700 800 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 15) i load = 300 ma (note 15) i load = 50 ma i load = 0.1 ma in dropout v in = 2.7 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 52 36 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 2.8 v) i outr 10 a 13. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. for output current capability for t a < 0 c, please refer to figure 19. 15. t a must be greater than 0 c.
ncv8535 www. onsemi.com 11 electrical characteristics ? 2.5 v (v out = 2.5 v typical, v in = 2.9 v, t a = ?40 c to +85 c, unless otherwise noted, note 16.) characteristic symbol min typ max unit output voltage (accuracy) v in = 2.9 v to 6.5 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 2.477 2.5 +0.9% 2.523 v output voltage (accuracy) v in = 2.9 v to 6.5 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 2.465 2.5 +1.4% 2.535 v output voltage (accuracy), (note 17) v in = 2.9 v to 6.5 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 2.462 2.5 +1.5% 2.538 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma (note 18) i load = 300 ma (note 18) i load = 50 ma i load = 0.1ma v do 340 230 110 10 mv peak output current (see figure 16) i pk 500 700 800 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 18) i load = 300 ma (note 18) i load = 50 ma i load = 0.1 ma in dropout v in = 2.4 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 56 35 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 2.5 v) i outr 10 a 16. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 17. for output current capability for t a < 0 c, please refer to figure 20. 18. t a must be greater than 0 c.
ncv8535 www. onsemi.com 12 electrical characteristics ? 1.9 v (v out = 1.9 v typical, v in = 2.9 v, t a = ?40 c to +85 c, unless otherwise noted, note 19.) characteristic symbol min typ max unit output voltage (accuracy) v in = 2.9 v to 5.9 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 1.883 1.9 +0.9% 1.917 v output voltage (accuracy) v in = 2.9 v to 5.9 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 1.873 1.9 +1.4% 1.927 v output voltage (accuracy), (note 20) v in = 2.9 v to 5.9 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 1.872 1.9 +1.5% 1.929 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma (notes 21, 22) i load = 300 ma (notes 21, 22) i load = 50 ma (notes 21, 22) v do 367 156 90 1030 1030 1030 mv peak output current (see figure 16) i pk 500 700 800 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 21) i load = 300 ma (note 21) i load = 50 ma i load = 0.1 ma in dropout v in = 2.2 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 53 33 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 1.9 v) i outr 10 a 19. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. for output current capability for t a < 0 c, please refer to figure 21. 21. t a must be greater than 0 c. 22. maximum dropout voltage is limited by minimum input voltage v in = 2.9 v recommended for guaranteed operation.
ncv8535 www. onsemi.com 13 electrical characteristics ? 1.8 v (v out = 1.8 v typical, v in = 2.9 v, t a = ?40 c to +85 c, unless otherwise noted, note 23.) characteristic symbol min typ max unit output voltage (accuracy) v in = 2.9 v to 5.8 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 1.783 1.8 +0.9% 1.817 v output voltage (accuracy) v in = 2.9 v to 5.8 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 1.774 1.8 +1.4% 1.826 v output voltage (accuracy), (note 24) v in = 2.9 v to 5.8 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 1.773 1.8 +1.5% 1.827 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma (notes 25, 26) i load = 300 ma (notes 25, 26) i load = 50 ma (notes 25, 26) v do 620 230 95 1130 1130 1130 mv peak output current (see figure 16) i pk 500 700 830 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 25) i load = 300 ma (note 25) i load = 50 ma i load = 0.1 ma in dropout v in = 2.2 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 52 33 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 1.8 v) i outr 10 a 23. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. for output current capability for t a < 0 c, please refer to figure 21. 25. t a must be greater than 0 c. 26. maximum dropout voltage is limited by minimum input voltage v in = 2.9 v recommended for guaranteed operation.
ncv8535 www. onsemi.com 14 electrical characteristics ? 1.5 v (v out = 1.5 v typical, v in = 2.9 v, t a = ?40 c to +85 c, unless otherwise noted, note 27.) characteristic symbol min typ max unit output voltage (accuracy) v in = 2.9 v to 5.5 v, i load = 0.1 ma to 500 ma, t a = 25 c v out ?0.9% 1.486 1.5 +0.9% 1.514 v output voltage (accuracy) v in = 2.9 v to 5.5 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v out ?1.4% 1.479 1.5 +1.4% 1.521 v output voltage (accuracy), (note 28) v in = 2.9 v to 5.5 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v out ?1.5% 1.477 1.5 +1.5% 1.523 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note) i load = 500 ma (notes 29, 30) i load = 300 ma (notes 29, 30) i load = 50 ma (notes 29, 30) v do 940 500 350 1430 1430 1430 mv peak output current (see figure 16) i pk 500 700 860 ma short output current (see figure 16) i sc 900 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 29) i load = 300 ma (note 29) i load = 50 ma i load = 0.1 ma in dropout v in = 2.2 v, i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 51 31 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in i sd 0.07 1.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = 1.5 v) i outr 10 a 27. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. for output current capability for t a < 0 c, please refer to figure 22. 29. t a must be greater than 0 c. 30. maximum dropout voltage is limited by minimum input voltage v in = 2.9 v recommended for guaranteed operation.
ncv8535 www. onsemi.com 15 electrical characteristics ? adjustable (v out = 1.25 v typical, v in = 2.9 v, t a = ?40 c to +85 c, unless otherwise noted, note 31) characteristic symbol min typ max unit reference voltage (accuracy) v in = 2.9 v to v out + 4.0 v, i load = 0.1 ma to 500 ma, t a = 25 c v ref ?0.9% 1.239 1.25 +0.9% 1.261 v reference voltage (accuracy) v in = 2.9 v to v out + 4.0 v, i load = 0.1 ma to 500 ma, t a = 0 c to +85 c v ref ?1.4% 1.233 1.25 +1.4% 1.268 v reference voltage (accuracy) (note 32) v in = 2.9 v to v out + 4.0 v, i load = 0.1 ma to 500 ma, t a = ?40 c to +125 c v ref ?1.5% 1.231 1.25 +1.5% 1.269 v line regulation v in = 2.9 v to 12 v, i load = 0.1 ma line reg 0.04 mv/v load regulation v in = 2.9 v, i load = 0.1 ma to 500 ma load reg 0.04 mv/ma dropout voltage (see app note), v out = 2.5 v to 10 v i load = 500 ma (note 33) i load = 300 ma i load = 50 ma i load = 0.1 ma v do 340 230 110 10 mv peak output current (note 33) (see figure 16) ipk 500 700 860 ma short output current (see figure 16) v out 3.3 v v out > 3.3 v i sc 900 990 ma thermal shutdown t j 160 c ground current in regulation i load = 500 ma (note 33) i load = 300 ma (note 33) i load = 50 ma i load = 0.1 ma in dropout v in = v out ?0.1 v or 2.2 v (whichever is higher), i load = 0.1 ma in shutdown s d = 0 v i gnd i gndsh 9.0 4.6 0.8 ? ? 0.07 14 7.5 2.5 190 500 1.0 ma a a a output noise c nr = 0 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f c nr = 10 nf, i load = 500 ma, f = 10 hz to 100 khz, c out = 10 f v noise 38 26 vrms vrms shutdown threshold voltage on threshold voltage off 2.0 0.4 v v s d input current, v sd = 0 v to 0.4 v or v sd = 2.0 v to v in v in 5.4 v v in > 5.4 v i sd 0.07 1.0 5.0 a output current in shutdown mode, v out = 0 v i osd 0.07 1.0 a reverse bias protection, current flowing from the output pin to gnd (v in = 0 v, v out_forced = v out (nom) 7 v) (note 34) i outr 1.0 a 31. performance guaranteed over the operating temperature range by design and/or characterization, production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. for output current capability for t a < 0 c, please refer to figures 18 to 22. 33. t a must be greater than 0 c. 34. reverse bias protection feature valid only if v out ? v in 7 v.
ncv8535 www. onsemi.com 16 figure 5. output voltage vs. temperature 5.0 v version 5.10 5.05 5.00 4.95 4.90 4.85 135 110 85 60 35 10 ?15 ?40 150 output voltage, v out (v) t a , temperature ( c) v out = 5.0 v figure 6. output voltage vs. temperature 3.0 v version figure 7. output voltage vs. temperature 2.8 v version 2.450 2.460 2.470 2.480 2.490 2.500 2.510 2.520 2.530 2.540 2.550 ?40 ?20 0 20 40 60 80 100 120 140 t a , temperature ( c) v out (v) figure 8. output voltage vs. temperature 2.5 v version v out = 2.5 v 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 ?40 ?20 0 20 40 60 80 100 120 140 t a , temperature ( c) v out (v) figure 9. output voltage vs. temperature 1.8 v version v out = 1.8 v 1.45 1.46 1.47 1.48 1.49 1.50 1.51 1.52 1.53 1.54 1.55 ?40 ?20 0 20 40 60 80 100 120 140 t a , temperature ( c) v out (v) figure 10. output voltage vs. temperature 1.5 v version v out = 1.5 v 2.95 2.96 2.97 2.98 2.99 3.00 3.01 3.02 3.03 3.04 3.05 ?40 ?20 0 20 40 60 80 100 120 140 t a , temperature ( c) v out (v) v out = 3.0 v 2.75 2.76 2.77 2.78 2.79 2.80 2.81 2.82 2.83 2.84 2.85 ?40 ?20 0 20 40 60 80 100 120 140 t a , temperature ( c) v out (v) v out = 2.8 v
ncv8535 www. onsemi.com 17 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 t a , temperature ( c) v do (mv) figure 11. dropout voltage vs. temperature 2.8 v version 50 ma 500 ma 300 ma 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 t a , temperature ( c) v do (mv) figure 12. dropout voltage vs. temperature 2.5 v version 50 ma 500 ma 300 ma 0 100 200 500 600 700 900 1100 1200 0 20 40 60 80 100 120 140 t a , temperature ( c) v do (mv) figure 13. dropout voltage vs. temperature 1.8 v version 50 ma 500 ma 300 ma figure 14. dropout voltage vs. temperature 1.5 v version 0 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 i sc i pk t a , temperature ( c) i pk (ma), i sc (ma) figure 15. peak and short current vs. temperature i out (ma) (for specific values of i pk and i sc , please refer to figure 15) v out (v) figure 16. output voltage vs. output current i sc i pk 0.97 v out 300 400 800 1000 0 100 200 500 600 700 900 1100 1200 0 20 40 60 80 100 120 140 t a , temperature ( c) v do (mv) 50 ma 500 ma 300 ma 300 400 800 1000
ncv8535 www. onsemi.com 18 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 t a , temperature ( c) i gnd (ma) figure 17. ground current vs. temperature 500 ma 300 ma 50 ma v in (v) i out (a) figure 18. output current capability for the 2.85 v version ?40 c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.85 2.95 3.05 3.15 3.25 3.35 3.45 3.55 3.65 3.75 3.85 0 c ?20 c v in (v) i out (ma) figure 19. output current capability for the 2.8 v version ?40 c 0 100 200 300 400 500 600 700 800 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 0 c ?20 c figure 20. output current capability for the 2.5 v version v in (v) i out (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 0 c ?30 c ?20 c ?10 c ?40 c figure 21. output current capability for the 1.8 v version v in (v) i out (ma) 0 100 200 300 400 500 600 700 800 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 0 c ?30 c ?20 c ?10 c ?40 c figure 22. output current capability for the 1.5 v version v in (v) i out (ma) 0 100 200 300 400 500 600 700 800 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 ?30 c ?10 c 125 c 85 c 25 c ?40 c 125 c 85 c 0 c ?30 c ?20 c ?10 c 25 c
ncv8535 www. onsemi.com 19 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1.0 10 100 f, frequency (khz) rr, ripple rejection (db) figure 23. ripple rejection vs. frequency 50 ma 500 ma 250 ma v out = 2.5 v c out = 10 f t j = 25 c 0 50 100 150 200 250 300 350 400 450 500 0.01 0.1 1.0 10 100 f, frequency (khz) figure 24. output noise density v out = 2.5 v i out = 500 ma t j = 25 c c out = 10 f c nr = 0 nf c out = 1.0 f c nr = 0 nf c out = 1.0 f c nr = 10 nf c out = 10 f c nr = 10 nf noise density (nv/ hz ) figure 25. dfn 10 self heating thermal characteristic as a function of copper area on the pcb output current (ma) maximum esr ( ) figure 26. stability with esr vs. i out 0 5.0 10 15 500 400 300 200 100 0 unstable area stable area v in at data sheet test conditions, 25 c, 1 f capacitance 200 150 100 50 0 600 500 400 300 200 100 0 700 ja ( c/w) copper heat spreading area (mm 2 ) 1 oz cf 250 300 2 oz cf output current (ma) esr ( ) figure 27. output current vs. esr 0 5.0 10 15 50 0 400 300 200 100 0 min esr 5 v, 1.0 f 5 v, 10 f 5 v, 0.1 f 1.25 v note: typical characteristics were measured with the same conditions as electrical characteristics.
ncv8535 www. onsemi.com 20 applications information reverse bias protection reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. normally in a bipolar ldo all the current will flow from the output pin to input pin through the pn junction with limited current capability and with the potential to destroy the ic. due to an improved architecture, the ncv8535 can withstand up to 7.0 v on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of a) flowing from the output pin to ground for infinite duration. input capacitor an input capacitor of at least 1.0 f, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. it will also reduce the circuit?s sensitivity to the input line impedance at high frequencies. the capacitor should be mounted with the shortest possible track length directly across the regular?s input terminals. output capacitor the ncv8535 remains stable with any type of capacitor as long as it fulfills its 1.0 f requirement. there are no constraints on the minimum esr and it will remain stable up to an esr of 5.0 . larger capacitor values will improve the noise rejection and load transient response. noise reduction pin output noise can be greatly reduced by connecting a 10 nf capacitor (c nr ) between the noise reduction pin and ground (see figure 1). in applications where very low noise is not required, the noise reduction pin can be left unconnected. for the adjustable version, in addition to the 10 nf c nr , a 68 pf capacitor connected in parallel with r1 (see figure 2) is recommended to further reduce output noise and improve stability. adjustable operation the output voltage can be set by using a resistor divider as shown in figure 2 with a range of 1.25 to 10 v. the appropriate resistor divider can be found by solving the equation below. the recommended current through the resistor divider is from 10 a to 100 a. this can be accomplished by selecting resistors in the k range. as result, the i adj *r2 becomes negligible in the equation and can be ignored. v out 1.25 * 1 r1 r2 i adj *r2 (eq. 1) example: for v out = 2.9 v, can use r 1 = 36 k and r 2 = 27 k . 1.25 * 1 36 k 27 k 2.91 v (eq. 2) dropout voltage the voltage dropout is measured at 97% of the nominal output voltage. no?load regulation considerations if there is no load at output of the regulator and ambient temperature is higher than 85 c leakage current flowing from input to output through pass transistor may cause increase of output voltage out of specification range up to input voltage level. to avoid this situation minimum load current of 100 a or higher is recommended if ambient temperature exceeds 85 c. thermal considerations internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. this feature provides protection from a catastrophic device failure due to accidental overheating. this protection feature is not intended to be used as a substitute to heat sinking. the maximum power that can be dissipated, can be calculated with the equation below: p d t j(max) t a r ja (eq. 3)
ncv8535 www. onsemi.com 21 device ordering information device* voltage option marking code package feature shipping ? ncv8535mnadjr2g adj. v8535 adj dfn10 (pb?free) non?w ettable flank 3000 / tape & reel NCV8535MN150R2G 1.5 v v8535 150 ncv8535mn180r2g 1.8 v v8535 180 ncv8535mn190r2g 1.9 v v8535 190 ncv8535mn250r2g 2.5 v v8535 250 ncv8535mn280r2g 2.8 v v8535 280 ncv8535mn285r2g 2.85 v v8535 285 ncv8535mn300r2g 3.0 v v8535 300 ncv8535mn330r2g 3.3 v v8535 330 ncv8535mn350r2g 3.5 v v8535 350 ncv8535mn500r2g 5.0 v v8535 500 ncv8535mladjr2g** adj. l8535 adj dfn10 (pb?free) wettable flank slp process 3000 / tape & reel ncv8535ml180r2g** 1.8 v l8535 180 ncv8535ml250r2g** 2.5 v l8535 250 ncv8535ml330r2g** 3.3 v l8535 330 ncv8535ml500r2g** 5.0 v l8535 500 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable. **in development.
ncv8535 www. onsemi.com 22 package dimensions dfn10, 3x3, 0.5p case 485c issue e ??? ??? ??? 10x seating plane l d e 0.15 c a a1 e d2 e2 b 15 10 6 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. 5. terminal b may have mold compound material along side edge. mold flashing may not exceed 30 microns onto bottom surface of terminal b. 6. for device opn containing w option, detail a and b alternate construction are not applicable. wet- table flank construction is detail b as shown on side view of package. b a 0.15 c top view side view bottom view pin one reference 0.10 c 0.08 c (a3) c 10x 10x 0.10 c 0.05 c a b note 3 k dim min max millimeters a 0.80 1.00 a1 0.00 0.05 a3 0.20 ref b 0.18 0.30 d 3.00 bsc d2 2.40 2.60 e 3.00 bsc e2 1.70 1.90 e 0.50 bsc l 0.35 0.45 l1 0.00 0.03 detail a k 0.19 typ 2x 2x detail b *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* ??? ?? 2.64 1.90 0.50 0.55 10x 3.30 0.30 10x dimensions: millimeters pitch package outline l1 detail a l alternate terminal constructions l alternate b?2 alternate b?1 alternate a?2 alternate a?1 detail b wettable flank option construction a1 a3 ncv8535/d on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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